Catalogus : Recensies
Recensies
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Thomas W. Schlereth Quaternäre AlGaInAs Quantenpunkte und deren Anwendung in Halbleiterlasern ISBN: 978-3-8440-1714-4 Prijs: 45,80 € / 57,25 SFR |
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The main subject of the this work, is the preparation and investigation of quaternary AlGainAs quantum dots and the application of these quantum dots as an optical gain material in semiconductor lasers. Where ever possible the results obtained here are compared to those of GaInAs quantum dots, which is the so far most thoroughly explored quantum dot material system in the scientific community. AlGainAs quantum dots offer some significant advantages, such as the accessibility of quantum dot emission wavelengths less than 900 nm and the possibility of tailoring the spectral and morphological properties of these quantum dots independently up to a certain extend. By using AlGainAs quantum dots as a quasi zero-dimensional, optical gain medium these advantages can be transfered to the resulting semiconductor lasers. This leads to laser components with high material gain and low threshold current densities. It also allows for lasers with wavelengths as short as 760 nm, which were previously inaccessible for quantum dot lasers in the GaAs material system using (Ga)InAs quantum dots. Furthermore it permits semiconductor laser with a very high temperature stability of the wavelength. The here manufactured and discussed laser structures thus represent an alternative concept to conventional devices for efficient optical pumping of Ytterbium-doped solid state lasers at 920 nm, and for oxygen detection by absorption spectroscopy at 760 nm. The preparation of the AlGaInAs quantum dot structures discussed in this work was carried out by solid source molecular beam epitaxy in the so-called Stranski-Krastanow growth mode. |
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| Bron: FIZ Karlsruhe, Leibniz-Institut für Informationsinfrastruktur. ETDE - Energy Database-production no.: DE13G4850 | |
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